Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus

A method, comprising:

• forming a first hard mask on a surface of a drift layer, the first hard mask including a first opening exposing a first region of the drift layer;
• forming a first implanted region at a first depth within the drift layer by exposing the first hard mask and the first region of the drift layer exposed by the first opening in the first hard mask layer to one or more implantations of dopant species with an implantation energy between 200 keV and 500 kEv and with doses between 1·1012 at/cm2 and 1·1016 at/cm2;
• and
• after forming the first implanted region, removing the first hard mask from the surface of the drift layer;
• after removing the first hard mask from the surface of the drift layer, forming a second hard mask on the surface of the drift layer with a second opening exposing a second region of the drift layer aligned with the first implantation region;
• forming a second implanted region at a second depth less than the first depth within the drift layer by exposing the second hard mask and the second region of the drift layer exposed by the second opening in the second hard mask to one or more implantations of dopant species with an implantation energy between 30 keV and 200 keV and with doses between 1·1012 at/cm2 and 1·1016 at/cm2;
• after forming the second implanted region, removing the second hard mask from the surface of the drift layer;
• and
• thermally oxidizing the first and second implanted regions.

A method, comprising:

• forming first hard mask on a surface of a drift layer, the first hard mask including a first opening exposing a first region of the drift layer;
• forming a first implanted region at a first depth within the drift layer by exposing the first hard mask and the first region to one or more first implantations of dopant species;
• removing the first hard mask from the surface of the drift layer;
• forming a second hard mask on the surface of the drift layer, the second hard mask includes a second opening exposing a second region of the drift layer, the second region aligned with the first implanted region;
• forming a second implanted region at a second depth within the drift layer different than the first depth within the drift layer by exposing the second hard mask and the second region to one or more second implantations of dopant species;
• removing the second hard mask layer;
• forming a third hard mask on the surface of the drift layer, the third hard mask includes a third opening exposing a third region of the drift layer, the third region aligned with the first implanted region and the second implanted region;
• and
• forming third implanted region at a third depth within the drift layer different than the first depth and the second depth within the drift layer by exposing the third hard mask and the third region to one or more third implantations of dopant species.