Method for producing doped transistor source and drain

A method for producing a transistor comprising the following steps of:

• providing on a support provided with a surface semiconductor layer and resting on an insulating layer:
• at least one transistor gate block arranged on the surface layer, insulating spacers surrounding said gate block, and raised semiconductor regions resting on the surface semiconductor layer on either side of said gate block and insulating spacers,
• making amorphous the raised semiconductor regions and the portions of the surface semiconductor layer located under these raised semiconductor regions over the entire thickness of said raised semiconductor regions and said portions, so as to reach the insulating layer,
• doping the raised semiconductor regions and said portions,
• carrying out at least one laser thermal annealing by means of one or more laser pulses so as to perform a recrystallisation of said raised regions and of said portions while carrying out an activation of dopants in said regions and said portions.