Semiconductor device and method of manufacturing the same

Abstract

In one embodiment, a method of manufacturing a semiconductor device includes supplying first silane-based gas to a surface of a first film, the first silane-based gas being aminosilane-based gas. The method further includes supplying second silane-based gas to the surface of the first film, the second silane-based gas having a thermal decomposition temperature lower than a thermal decomposition temperature of the first silane-based gas. The method further includes supplying an oxidant to the surface of the first film to form a second film on the surface of the first film, the second film including silicon and oxygen.

Dependencies are inferred from the claim text.