Method of depositing silicon-based material and precursors for the same

Abstract

The disclosure relates to methods of depositing a material including silicon, carbon and nitrogen on a substrate. The methods include providing the substrate in a reaction chamber, providing a material precursor into the reaction chamber in a vapor phase and providing active species generated from plasma into the reaction chamber to form a material including silicon, carbon and nitrogen on the substrate. In the disclosure, the material precursor includes a silicon-containing azole. The disclosure further relates to processing assemblies for the manufacture of semiconductor devices.

Dependencies are inferred from the claim text.