Cover wafer and method of cleaning substrate processing apparatus including the same

A method of cleaning a substrate processing apparatus that provides a processing space for accommodating a process wafer and includes a substrate support including a dielectric plate, the method comprising:

• disposing a cover wafer on an upper surface of the substrate support;
• fixing the cover wafer to the substrate support using the internal electrode of the dielectric plate of the substrate support;
• plasma cleaning the processing space;
• and
• removing a current of the internal electrode and removing the cover wafer,
• wherein:
• the cover wafer includes silicon carbide (SiC),
• a width of the upper surface of the cover wafer is greater than a width of an upper surface of the dielectric plate,
• a lower surface of the cover wafer is in contact with the substrate support, and
• an average roughness of an upper surface of the cover wafer is less than an average roughness of an upper surface of the process wafer.

A method of cleaning a substrate processing apparatus that provides a processing space for accommodating a process wafer and includes a substrate support including a dielectric plate, the method comprising:

• disposing a cover wafer on a plurality of support portions of the substrate support;
• fixing the cover wafer to the substrate support using the internal electrode of the dielectric plate of the substrate support;
• plasma cleaning the processing space;
• and
• removing a current of the internal electrode and removing the cover wafer,
• wherein:
• the cover wafer includes silicon carbide (SiC),
• a width of the upper surface of the cover wafer is greater than a width of an upper surface of the dielectric plate and less than a width of the substrate support,
• a lower surface of the cover wafer is in contact with the substrate support, and
• an average roughness of an upper surface of the cover wafer is less than an average roughness of an upper surface of the process wafer
• the average roughness of the upper surface of the cover wafer is about 0.05 μm to about 0.15 μm.