Substrate processing apparatus and substrate processing method

A substrate processing apparatus, comprising:

• a chamber comprising a first space and a second space;
• a plasma source configured to generate plasma in the second space;
• a substrate support in the first space and configured to support a substrate;
• and
• an ion blocker between the second space and the first space, the ion blocker comprising through-holes configured to:
• pass therethrough radicals of the plasma from the second space to the first space;
• and
• provide the radicals to the substrate,
• wherein the ion blocker further comprises:
• a first region comprising a first heating line connected to a first heater;
• a second region comprising a second heating line connected to a second heater;
• and
• a first boundary region between the first region and the second region, the first boundary region comprising a first cooling flow path connected to a first chiller, and
• wherein a first temperature of the first region is controlled independently of a second temperature of the second region.

A substrate processing method comprising:

• loading a substrate into a chamber;
• generating plasma in the chamber;
• controlling a temperature of an ion blocker in the chamber;
• and
• processing the substrate using radicals of the plasma, the radicals having passed through the ion blocker,
• wherein the ion blocker comprises:
• a plurality of regions each comprising a heating line connected to a heater, and
• one or more boundary regions between at least two of the plurality of regions, each of the one or more boundary regions comprising a cooling flow path connected to a chiller, and
• wherein the controlling of the temperature of the ion blocker comprises independently controlling temperatures of each of the plurality of regions and temperatures of the one or more boundary regions.