Pass voltage adjustment for program operation in a memory device
AssigneeMicron Technology, Inc.
InventorsYu-Chung Lien, Zhenming Zhou
Life of this patent
Estimating the term…
Abstract
A request to perform a program operation on a set of vertically stacked memory cells of a memory device is received. A pass voltage adjustment value based on a number of program erase cycles (PECs) associated with the memory device is determined responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable. A default pass voltage is adjusted by the pass voltage adjustment value to generate an adjusted pass voltage. The program operation on the set of vertically stacked memory cells is performed using the adjusted pass voltage.
Claims20
A method comprising:
- receiving a request to perform a program operation on a set of vertically stacked memory cells of a memory device, wherein each memory cell of the set of vertically stacked memory cells is addressable by a respective wordline;
- responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable, determining, based on a number of program erase cycles (PECs) associated with the memory device, a pass voltage adjustment value;
- adjusting a default pass voltage by the pass voltage adjustment value to generate an adjusted pass voltage;
- and
- performing, using the adjusted pass voltage, the program operation on the set of vertically stacked memory cells.
A system comprising:
- a memory device;
- and
- a processing device, operatively coupled to the memory device, the processing device to perform operations comprising:
- receiving a request to perform a program operation on a set of vertically stacked memory cells of a memory device, wherein each memory cell of the set of vertically stacked memory cells is addressable by a respective wordline;
- responsive to determining that at least one memory cell of the set of vertically stacked memory cells is non-programmable, determining, based on a number of program erase cycles (PECs) associated with the memory device, a pass voltage adjustment value;
- adjusting a default pass voltage by the pass voltage adjustment value to generate an adjusted pass voltage;
- and
- performing, using the adjusted pass voltage, the program operation on the set of vertically stacked memory cells.
A non-transitory computer readable storage medium including instructions that, when executed by a processing device, cause the processing device to perform a method comprising:
- receiving a request to perform a program operation on a first block of a memory device, wherein the block includes a non-programmable top deck and a programmable bottom deck;
- and
- performing, using an adjusted pass voltage, the program operation on the first block.
Dependencies are inferred from the claim text.