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US 2024/0203497 A1Published application
Control method and controller of 3d nand flash
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsYing Huang, Hongtao Liu, Qiguang Wang, Wenzhe Wei
Life of this patent
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Abstract
A method of programming a memory device including a cell is provided. A first program pulse is applied to the cell. Middle program pulses are applied to the cell after the application of the first program pulse. A last program pulse is applied to the cell after the application of the middle program pulses. A pulse width of the last program pulse is wider than a pulse width of each of the middle program pulses and the first program pulse.
Claims20
A method of programing a memory device comprising a cell, the method comprising:
- applying a first program pulse to the cell;
- applying middle program pulses to the cell after the application of the first program pulse;
- and
- applying a last program pulse to the cell after the application of the middle program pulses, wherein a pulse width of the last program pulse is wider than a pulse width of each of the middle program pulses and the first program pulse.
1 more element
A memory device, comprising:
- a memory array comprising a cell;
- and
- a controller coupled to the memory array and configured to:
- apply a first program pulse to the cell;
- apply middle program pulses to the cell after the application of the first program pulse;
- and
- apply a last program pulse to the cell after the application of the middle program pulses,
- wherein a pulse width of the last program pulse is wider than a pulse width of each of the middle program pulses and the first program pulse.
5 more elements
Dependencies are inferred from the claim text.