Method and device for detecting word line shorts in memory device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsWenqi WANG, Wenlong LI, Ban WANG, Jinxing CHEN, Yanli WANG, Zongliang HUO
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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsWenqi WANG, Wenlong LI, Ban WANG, Jinxing CHEN, Yanli WANG, Zongliang HUO
Estimating the term…
A method for detecting word line shorts in a memory device includes: determining a region of interest (ROI) region in a bright voltage contrast (BVC) image for contact through-holes (CTs) of word lines in the memory device, the CTs comprising first CTs in at least one first word line that is electronically charged and second CTs in at least one second word line that is not electronically charged, and the ROI region comprising the at least one first word line; determining coordinates of each CT in the ROI region; reviewing a grayscale value at a position of the coordinates of each CT in the ROI region to determine whether the CT is a defective CT; and displaying the defective CT in response to the defective CT being determined.
A method for detecting word line shorts in a memory device, comprising:
A device for detecting word line shorts in a memory device, comprising:
A non-transitory computer-readable storage medium storing a computer program for detecting word line shorts in a memory device, the computer program performing:
Dependencies are inferred from the claim text.