Opportunistic storage of non-write-boosted data in write booster cache memory

A method, comprising:

• receiving, by a memory device, a write command that includes data to be written to the memory device;
• receiving, by the memory device, an indication that single-level cell data caching is deactivated for the data;
• determining, by the memory device, whether the data is associated with a first data type or a second data type;
• and
• selectively writing, by the memory device, the data to single-level cell cache memory or multi-level cell main memory based on:
• a determination of whether the data is associated with the first data type or the second data type, and
• a determination of whether the single-level cell cache memory has available memory that is not reserved for the single-level cell data caching.

An apparatus, comprising:

• a non-volatile memory array;
• and
• a controller configured to execute instructions that cause the apparatus to:
• process a received command to write data to the non-volatile memory array, wherein the command is received without an indication that the data is to be written in a single-level cell (SLC) cache memory of the non-volatile memory array;
• determine whether the data is associated with a first data type;
• determine whether the SLC cache memory has sufficient memory not reserved for SLC data caching;
• and
• write the data to the SLC cache memory based on a determination that the data is associated with the first data type and that the SLC cache memory has sufficient memory not reserved for SLC data caching.