Temperature compensation for pre-charge spike in multi-pass programming

A memory device, comprising:

• a memory block that includes a plurality of memory cells arranged in a plurality of word lines;
• control circuitry in electrical communication with the plurality of memory cells, the control circuitry being configured to:
• determine an operating temperature of the memory device;
• select a spike pre-charge voltage based on the operating temperature of the memory device;
• program a first word line and a second word line in a first programming pass of a multi-pass programming operation;
• and
• after the first programming pass is completed on the first and second word lines, further program the first word line in a second programming pass that includes a plurality of program loops with pre-charge operations, and wherein the spike pre-charge voltage is applied to the second word line by the control circuitry during each pre-charge operation.

An apparatus, comprising:

• a memory block that includes a plurality of memory cells arranged in a plurality of word lines;
• a programming means for programming the memory cells to a plurality of data states such that each memory cell retains a plurality of bits of data, the programming means being in electrical communication with the plurality of memory cells, and the programming means being configured to:
• determine an operating temperature of the memory device;
• compare the operating temperature of the memory device to a threshold temperature;
• set a spike pre-charge voltage as a high temperature spike pre-charge voltage in response to the operating temperature of the memory device being above the threshold temperature and as a low temperature spike pre-charge voltage in response to the operating temperature of the memory device being below the threshold temperature, the low temperature spike pre-charge voltage being greater than the high temperature spike pre-charge voltage;
• program a first word line and a second word line in a first programming pass of a multi-pass programming operation;
• and
• after the first programming pass is completed on the first and second word lines, further program the first word line in a second programming pass that includes a plurality of program loops with pre-charge operations, and wherein the spike pre-charge voltage is applied to the second word line by the control circuitry during each pre-charge operation.