Managing data reliability in semiconductor devices

A memory device, comprising:

• a first page buffer;
• a second page buffer;
• and
• circuitry configured to:
• obtain first readout data by reading particular data on the memory device at a first read voltage,
• store the first readout data in the first page buffer,
• obtain second readout data by reading the particular data on the memory device at a second read voltage, wherein the second read voltage is different from the first read voltage, store the second readout data in the second page buffer, and
• compare the first readout data and the second readout data and obtain a comparison result.

A computer-implemented method comprising:

• in response to determining that particular data stored in a semiconductor device satisfies a reliability condition,
• obtaining first readout data by reading the particular data at a first read voltage, and
• obtaining second readout data by reading the particular data at a second read voltage, wherein the second read voltage is different from the first read voltage;
• comparing the first readout data and the second readout data and obtaining a comparison result;
• and
• based on the comparison result, determining whether to perform an error correction process on the particular data.