Composition for forming silicon-containing resist underlayer film

Abstract

A composition forms a silicon-containing underlayer film, the composition being for forming a silicon-containing resist underlayer film that enables formation of a good resist pattern without pattern collapse even when having a thinner thickness compared to conventional products, such as a thickness of 10 nm or less. The composition for forming a silicon-containing underlayer film contains: [A] a polysiloxane having a weight average molecular weight of 1,800 or less as determined by gel permeation chromatography (GPC) analysis in terms of polystyrene, and the amount of a component having a molecular weight of more than 2,500 is less than 20% in an integral molecular weight distribution curve prepared by gel permeation chromatography (GPC) analysis in terms of polystyrene; and [B] a solvent.

Dependencies are inferred from the claim text.