Optical proximity correction (opc) method and method of manufacturing mask by using the same

An optical proximity correction (OPC) method, comprising:

• generating a mask layout with one mask for rectangular target patterns arranged in zigzags on a wafer in a first direction;
• dividing edges of the mask layout into fragments having a same length;
• generating a rotated mask layout by rotating the mask layout at an angle at which corners between the mask layout and an adjacent mask layout are farthest apart;
• extracting a contour of a target pattern through simulation by inputting data on the fragments of the rotated mask layout to an OPC model;
• calculating an edge placement error (EPE) that is a difference between the contour and an edge of the target pattern for each fragment;
• and
• determining whether to re-perform the extracting of the contour of the target pattern based on a set reference value for the EPE or a set reference number of times, wherein, when it is determined to re-perform the extracting of the contour of the target pattern, the method further comprises:
• calculating displacements of the fragments;
• moving the fragments by the displacements;
• and
• repeating the extracting of the contour of the target pattern after moving the fragments by the displacements,
• wherein, when it is determined not to re-perform the extracting of the contour of the target pattern, the method further comprises determining the rotated mask layout as an OPCed layout.

A mask manufacturing method, comprising:

• generating a mask layout with one mask for target patterns arranged in zigzags on a wafer in a first direction;
• dividing edges of the mask layout into fragments having a same length;
• generating a rotated mask layout by rotating the mask layout at a predetermined angle;
• extracting a contour of a target pattern through simulation by inputting data on the fragments of the rotated mask layout to an optical proximity correction (OPC) model;
• calculating an edge placement error (EPE) that is a difference between the contour and an edge of the target pattern for each fragment;
• and
• determining whether to re-perform the extracting of the contour of the target pattern, wherein, when it is determined not to re-perform the extracting of the contour of the target pattern, the method further comprises:
• determining the rotated mask layout as an OPCed layout;
• transmitting data on the OPCed layout as mask tape-out (MTO) design data;
• preparing mask data based on the MTO design data;
• and
• performing exposure on a substrate for a mask based on the mask data, wherein, when it is determined to re-perform the extracting of the contour of the target pattern, the method further comprises:
• calculating displacements of the fragments;
• and
• moving the fragments by the displacements;
• and
• repeating the extracting of the contour of the target pattern after moving the fragments by the displacements.