Method and system for reticle enhancement technology
AssigneeD2S, Inc.
InventorsAkira Fujimura, Nagesh Shirali, Ajay Baranwal
Life of this patent
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Abstract
Methods incorporate variable side wall angle (VSA) into calculated patterns, using a mask 3D (M3D) effect. Embodiments include inputting a mask exposure information and determining the M3D effect. Determining the M3D effect may include determining the VSA. Embodiments may include calculating a VSA; and calculating a pattern on a substrate using the calculated VSA, wherein calculating the pattern on the substrate includes a mask 3D effect.
Claims22
A method for reticle enhancement technology (RET) for transferring a pattern to a substrate, the method comprising:
- inputting a mask exposure information;
- determining a mask 3D (M3D) effect, wherein the determining the M3D effect includes determining a variable side wall angle (VSA);
- calculating a calculated pattern on the substrate using the M3D effect;
- and
- modifying the mask exposure information based on the calculated pattern on the substrate.
A method for calculating a pattern to be formed on a substrate using optical lithography with a mask, the method comprising:
- inputting a mask exposure information that will form a mask pattern on the mask;
- calculating a variable side wall angle (VSA);
- calculating the pattern on the substrate using the VSA, wherein the calculating the pattern on the substrate includes a mask 3D (M3D) effect;
- and
- modifying the mask exposure information based on the calculated pattern on the substrate.
A system for reticle enhancement technology (RET) comprising:
- a. a device configured to receive a mask exposure information;
- b. a device configured to determine a mask 3D (M3D) effect, wherein the determining the M3D effect includes determining a variable side wall angle (VSA);
- and
- c. a device configured to calculate a calculated pattern on a substrate using the M3D effect.
Dependencies are inferred from the claim text.