Reflective mask blank for euv lithography

A reflective mask blank for EUV lithography comprising a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, a low-reflective layer for light having a wavelength of from 190 nm to 260 nm which is mask-pattern inspection light, and a hard mask layer,

• wherein the protective layer comprises ruthenium (Ru),
• the absorption layer comprises tantalum (Ta),
• the low-reflective layer comprises tantalum (Ta) and oxygen (O),
• the hard mask layer comprises chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and
• the hard mask layer has a film density of from 3.00 g/cm3 to 4.45 g/cm3.