Layered structure with high dielectric constant for use with active matrix backplanes
AssigneeNuclera Ltd
InventorCristina Visani
Life of this patent
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Abstract
Layered dielectric materials for use in controlling dielectric strength in microelectronic devices, especially as they relate to electrophoretic and electrowetting applications. Specifically, a combination of a first atomic layer deposition (ALD) step, a sputtering step, and a second ALD step result in a layer that is chemically robust and nearly pinhole free. The dielectric layer may be disposed on the transparent common electrode of an electrophoretic display or covering the pixelated backplane electrodes, or both.
Claims20
-13. (canceled)
An electrowetting on dielectric (EWoD) device having a plurality of active matrix electrodes disposed in an array where each electrode is associated with a thin film transistor (TFT), the device comprising:
- a layered dielectric stack comprising multiple metal oxide layers, wherein the layers include:
- a first layer of an aluminum oxide deposited by atomic layer deposition and having a thickness between 9 and 80 nm;
- a second layer of a hafnium oxide, the second layer having a thickness between 40 nm and 250 nm;
- a third layer of a hafnium oxide deposited by atomic layer deposition, the third layer having a thickness between 10 nm and 35 nm, wherein the second layer is disposed between the first and third layers;
- and
- a hydrophobic layer deposited on the layered dielectric.
A method of creating an electrowetting on dielectric (EWoD) device having a layered structure, the method comprising:
- providing a substrate having a plurality of active matrix electrodes disposed in an array where each electrode is associated with a thin film transistor (TFT);
- depositing a layered dielectric stack on the substrate by:
- depositing a first layer of aluminum oxide using atomic layer deposition, the first layer having a thickness between 9 nm and 80 nm;
- depositing a second layer of hafnium oxide, the second layer having a thickness between 40 nm and 250 nm;
- and
- depositing a third layer of hafnium oxide using atomic layer deposition, the third layer having a thickness between 10 nm and 35 nm;
- and
- depositing a hydrophobic layer on the layered dielectric.
Dependencies are inferred from the claim text.