Method of performing cleaning and apparatus for performing substrate processing
AssigneeTokyo Electron Limited
InventorsHiroaki ASHIZAWA, Hirokazu UEDA
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsHiroaki ASHIZAWA, Hirokazu UEDA
Estimating the term…
A method of performing a cleaning to remove a deposition film deposited during a substrate processing, includes: forming a heating film on an upper surface of the deposition film before performing the cleaning by supplying a cleaning gas to the deposition film deposited on a surface of a device arranged in a space where the substrate processing is performed, wherein the heating film undergoes a temperature increase due to a reaction heat generated when being removed by a reaction with the cleaning gas; supplying the cleaning gas to the heating film to remove the heating film and heating the deposition film on a lower surface of the heating film by the temperature increase; and performing the cleaning by supplying the cleaning gas to the deposition film having an increased temperature due to the heating the deposition film, after the heating film is removed.
A method of performing a cleaning to remove a deposition film deposited during a substrate processing, the method comprising:
An apparatus for performing a processing of a substrate, comprising:
Dependencies are inferred from the claim text.