Low temperature deposition of iridium containing films
AssigneeApplied Materials, Inc.
InventorsFeng Q. Liu, Hua Chung, Schubert Chu, Mei Chang, Jeffrey W. Anthis, David Thompson
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Abstract
Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.
Claims12
A method of depositing an iridium-containing film, the method comprising exposing a substrate surface maintained at a temperature in the range of about −25° C. to less than 300° C. to iridium hexafluoride and a reactant, wherein the entire substrate surface is maintained at the temperature in the range of about −25° C. to less than 300° C. during the method.
A method of depositing an iridium-containing film, the method comprising:
- sequentially exposing a substrate surface maintained at a temperature in the range of about −25° C. to less than 300° C. to iridium hexafluoride and a reactant, wherein the entire substrate surface is maintained at the temperature in the range of about −25° C. to less than 300° C. during the method, wherein the substrate surface comprises a first material consisting essentially of silicon and a second material comprising silicon oxide, silicon nitride or Al2O3, and the iridium-containing film is deposited selectively on the first material over the second material at a rate 15 times greater on the first material over the second material.
Dependencies are inferred from the claim text.