Method for forming high-quality film by cvd process

Abstract

This application relates to a method for forming a high-quality film by a CVD process. Specifically, this application provides a method for depositing a flowable film on a substrate. The method includes: introducing an organosilicon precursor into a deposition chamber, where the deposition chamber includes the substrate; generating at least one nitrogen-containing free radical in remote plasma; introducing the nitrogen-containing free radical into the deposition chamber; reacting the nitrogen-containing free radical with the organosilicon precursor to generate a polysilazane chain, where the polysilazane chain is deposited on the substrate and flowable on the surface of the substrate, thereby forming the flowable film. According to the method of this application, the polysilazane chain can be generated and flowable on the surface of the substrate, thereby forming the flowable film. The flowable film can quickly fill the voids or gaps, thereby avoiding the formation of permanent defects in the voids or gaps.

Dependencies are inferred from the claim text.