Devices and methods for sputtering at least two elements

A method, comprising:

• determining a temperature value representing a temperature of a substrate on which a material layer comprising at least a first element and a second element in a predefined atomic ratio is to be deposited;
• determining, based on the temperature value, a nominal power ratio between a first power associated with sputtering the first element and a second power associated with sputtering the second element;
• and
• setting a first power value of the first power and a second power value of the second power in accordance with the nominal power ratio.

A method, comprising:

• sputtering at least a first element and a second element to deposit, on a substrate, a material layer comprising the first element and the second element;
• during sputtering the first element and the second element:
• detecting a temperature value representing a temperature of the substrate;
• determining, based on the temperature value, one or more operation parameters of the sputtering;
• and
• controlling the sputtering based on the one or more operation parameters.

A method, comprising:

• sputtering at least a first element and a second element to deposit, on a substrate, a material layer comprising the first element and the second element;
• during sputtering the first element and the second element:
• detecting plasma properties associated with sputtering the first element and/or the second element;
• determining, based on the plasma properties, one or more operation parameters of the sputtering;
• and
• controlling the sputtering based on the one or more operation parameters.