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US 2024/0199953 A1Published application
Etchant composition for silicon layer and etching method using the same
AssigneeEnf Technology Co., Ltd.
InventorsJeong Sik OH, Hak Soo KIM, Gi Young KIM, Myung Ho LEE, Myung Geun SONG
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Abstract
Provided is an etchant composition for a silicon layer including: a fluoride-based compound; a nitrate-based compound; an acid mixture including a phosphoric acid-based inorganic acid and an organic acid; and a nitrosyl compound and capable of selectively etching the silicon layer with respect to a silicon oxide layer.
Claims12
An etchant composition for a silicon layer comprising:
- a fluoride-based compound;
- a nitrate-based compound;
- an acid mixture including a phosphoric acid-based inorganic acid and an organic acid;
- and a nitrosyl compound.
1 more element
Dependencies are inferred from the claim text.