Perturbed symmetry in stacked graphene technologies
AssigneeApplied Physics, Inc.
InventorGianni Martire
Life of this patent
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AssigneeApplied Physics, Inc.
InventorGianni Martire
Estimating the term…
A graphene structure can include multiple graphene layers stacked into a perturbed symmetry. A first graphene layer can be situated a first rotational angle with respect to a rotational axis extending perpendicularly through the first graphene layer, and a second graphene layer can be situated atop the first graphene layer at a second rotational angle with respect to the rotational axis. A third graphene layer can be situated atop the second graphene layer at a third rotational angle with respect to the rotational axis, and the third rotational angle can be different than the second rotational angle. Additional graphene layers can be successively stacked onto the graphene structure, with each layer being set at a different rotational angle than the previous layer. Six total graphene layers can be stacked. The relationship of the ratios between all rotational angles can forms an arithmetic, geometric, or Fibonacci sequence, or another pattern.
An apparatus, comprising:
A method of forming a graphene structure, the method comprising:
Dependencies are inferred from the claim text.