Method for manufacturing curved surface support structure, and hemispherical resonator gyroscope

A method for manufacturing a curved surface supported structure comprising an upper wafer and a lower wafer, the method comprising:

• forming an annular recess on an upper surface of the lower wafer by etching, and a stem having a tip higher than a radially-outer-surface at a generally center of the annular recess by etching the radially-outer-surface, wherein the radially-outer-surface is a plane located at a radially outer side of the annular recess;
• forming a plurality of first electrodes arranged on the radially-outer-surface;
• forming a sacrificial layer, which is an annular deposition pattern on the plurality of first electrodes;
• forming a plurality of second electrodes, which are arranged on a bottom surface of the upper wafer in correspondence with the plurality of first electrodes;
• bonding the upper wafer and the lower wafer with the sacrificial layer in between so that the plurality of first electrodes and the plurality of second electrodes are superimposed;
• separating a radially outer portion, which is located at a radially outer side of the upper wafer relative to the plurality of second electrodes by etching after the bonding;
• vacuum heating the upper wafer, the lower wafer, and the sacrificial layer under a condition where a pressure in a cavity defined by the upper wafer, the lower wafer, and the sacrificial layer is different from an ambient pressure after the separating;
• and
• removing the sacrificial layer by etching after the vacuum heating at the pressure different from the ambient pressure.