Method and system for fabricating a mems device cap

A method comprising:

• forming a plurality of complementary metal oxide semiconductor (CMOS) dice on a CMOS wafer, wherein each CMOS die of the plurality of CMOS dice includes a plurality of through silicon vias (TSVs) associated therewith and positioned on a periphery of its associated CMOS die;
• forming a plurality of micro-electro-mechanical systems (MEMS) dice on a MEMS wafer;
• forming a monolithic wafer by stacking the CMOS wafer and the MEMS wafer, wherein the monolithic wafer comprises a plurality of monolithic dice, wherein each monolithic die of the plurality of monolithic dice comprises a CMOS die and a MEMS die that are stacked on top of one another forming a monolithic die;
• and
• separating a first monolithic die from a second monolithic die of the monolithic wafer by cutting through a scribe region between the first monolithic die and the second monolithic die,
• wherein the first monolithic die comprises a first MEMS die and a first CMOS die and wherein the second monolithic die comprises a second MEMS die and a second CMOS die,
• wherein the separating exposes at least one or more TSVs of the plurality of TSVs of the first CMOS die to an environment outside of the first monolithic die,
• wherein the separating exposes at least one or more TSVs of the plurality of TSVs of the second CMOS die to the environment outside of the second monolithic die,
• wherein the at least one or more TSVs of the plurality of TSVs of the first CMOS is configured to facilitate electrical connection between the first CMOS die of the first monolithic die and an electronic component that is external to the first monolithic die.