Semiconductor device, memory cell and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Ying Lee, Bo-Jiun Lin, Shao-Ming Yu, Yu-Chao Lin
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Abstract
A memory cell includes a memory device, a connecting structure, an insulating layer and a selector. The connecting structure is disposed on and electrically connected to the memory device. The insulating layer covers the memory device and the connecting structure. The selector is located on and electrically connected to the memory device, where the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.
Claims20
A memory cell, comprising:
- a memory device;
- a connecting structure, disposed over and in contact with the memory device;
- and
- a selector, disposed over and electrically coupled to the memory device, wherein the selector stands on the connecting structure.
A semiconductor device, comprising:
- a first interconnect structure;
- a memory cell, disposed over and electrically coupled to the first interconnect structure, wherein the memory cell comprises:
- a memory device;
- a connecting structure, disposed over and in contact with the memory device;
- and
- a selector, disposed over and electrically coupled to the memory device, wherein the selector is extended over and coupled to the connecting structure;
- and
- a second interconnect structure, disposed over the memory cell and electrically coupled to the selector, wherein the memory cell is between the first interconnect structure and the second interconnect structure.
A method of manufacturing a memory cell, comprising:
- forming a memory device and a connecting structure disposed on the memory device;
- disposing a selector material over the connecting structure, the selector material extending over and connecting to the connecting structure;
- and
- patterning the selector material to form a selector being in contact with the connecting structure so as to form the selector disposed over and electrically coupled to the memory device.
Dependencies are inferred from the claim text.