Semiconductor components, fabrication methods thereof and memory systems
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsSheng Peng, Zhiyong Lu, Wenbo Zhang, Xiaoming Mao, Zhaohui Cheng, Jing Gao, Lei Xue
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Abstract
Semiconductor components, fabrication methods thereof and memory systems. A fabrication method includes performing trap repairing on a first wafer at a first temperature, the first wafer including memory cells; bonding the first wafer with a second wafer to form a semiconductor component, the second wafer including a device layer; and repairing the semiconductor component at a second temperature lower than the first temperature.
Claims18
A method of fabricating a semiconductor component, the method comprising:
- performing trap repairing on a first wafer at a first temperature, the first wafer including memory cells;
- bonding the first wafer with a second wafer to form the semiconductor component, the second wafer including a device layer;
- and
- repairing the semiconductor component at a second temperature lower than the first temperature.
A semiconductor component, comprising:
- a first wafer including memory cells;
- and
- a second wafer bonded with the first wafer to form a bonding interface, the second wafer including a device layer;
- wherein a first dielectric layer is on the side of the first wafer facing the bonding interface, and a material of the first dielectric layer includes at least one of nitride, polysilicon or carbonitride.
A memory system, comprising:
- a semiconductor component including:
- a first wafer including memory cells;
- and
- a second wafer bonded with the first wafer to form a bonding interface, the second wafer including a device layer, wherein a first dielectric layer is on the side of the first wafer facing the bonding interface, and a material of the first dielectric layer includes at least one of nitride, polysilicon or carbonitride;
- and
- a controller to control the semiconductor component.
Dependencies are inferred from the claim text.