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US 2024/0196590 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorChung-Lin HUANG
Life of this patent
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Abstract
A manufacturing method of a semiconductor device includes forming an opening in a substrate, implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure after implanting the dopant in the substrate from the sidewall of the opening, and forming a passing word line in the dielectric structure.
Claims20
A manufacturing method of a semiconductor device, comprising:
- forming an opening in a substrate;
- implanting a dopant in the substrate from a sidewall of the opening such that a doping region is formed in the substrate at the sidewall of the opening;
- after implanting the dopant in the substrate from the sidewall of the opening, filling a dielectric material in the opening to form a first dielectric structure, and the doping region is in contact with the sidewall of the first dielectric structure;
- and
- forming a passing word line in the first dielectric structure.
2 more elements
A semiconductor device, comprising:
- a substrate comprising a doped active region;
- a first dielectric structure in the substrate;
- a passing word line in the first dielectric structure;
- an active word line in the doped active region of the substrate and is adjacent to the passing word line;
- and
- a doping region in the substrate and in contact with a sidewall of the first dielectric structure, wherein the doping region is between the active word line and the first dielectric structure, and the doping region has a dopant concentration higher than a dopant concentration of the doped active region.
3 more elements
Dependencies are inferred from the claim text.