Semiconductor drive device and semiconductor module

A semiconductor module comprising:

• a first semiconductor device and a second semiconductor device each including a collector electrode, an emitter electrode, a first gate electrode, a second gate electrode, and a third gate electrode, the first gate electrode, the second gate electrode, and the third gate electrode being controlled independently, and in a period from when the first gate electrode is turned on to when the first gate electrode is turned off, a turn-on period of the second gate electrode being less than a turn-on period of the first gate electrode, and a turn-on period of the third gate electrode being less than the turn-on period of the second gate electrode;
• and
• a semiconductor drive device configured to drive the first semiconductor device and the second semiconductor device,
• the semiconductor drive device including a third turn-off gate resistor that is electrically connected to the third gate electrode of each of the first semiconductor device and the second semiconductor device and that is inserted into a third turn-off interconnect configured to apply a potential for turning off the third gate electrode, and
• R
• CGsoff
• ≤
• Vth
• ⁢
• 3
• min
• ⁡
• (
• C
• CGsgc
• )
• ⁢
• dv
• dt
• (
• 1
• )
• where, in each of the first semiconductor device and the second semiconductor device, a threshold voltage of the third gate electrode being Vth3, a resistance value of the third turn-off gate resistor being RCGsoff, a minimum value of a capacitance between the third gate electrode and the collector electrode in a voltage dependence characteristic being min (CCGsgc), and a time displacement of a voltage at a time of turning on being dv/dt.