Light-emitting diode structure
AssigneeTaiwan-Asia Semiconductor Corporation
InventorsKun-Te LIN, Kuo-Chen WU, Ching-Shih MA
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AssigneeTaiwan-Asia Semiconductor Corporation
InventorsKun-Te LIN, Kuo-Chen WU, Ching-Shih MA
Estimating the term…
The present invention provides a light-emitting diode structure, comprising a substrate, a first semiconductor layer, a second semiconductor layer, a second electrode and at least one current blocking trench. The substrate includes a first electrode. The first semiconductor layer is located on the substrate. The second semiconductor layer is located on the first semiconductor layer, and a light-emitting layer is formed between the first semiconductor layer and the second semiconductor layer. The second electrode is located on the second semiconductor layer. Each current blocking trench is recessed from a light exit surface of the second semiconductor layer toward the substrate. By means of the at least one current blocking trench, the current flowing from the second electrode flows through the light-emitting layer located outside the second electrode to the first electrode in a diffusing manner.
A light-emitting diode structure, comprising:
A light-emitting diode structure, comprising:
Dependencies are inferred from the claim text.