Photoelectric conversion element, method for manufacturing the same, and imaging device

Abstract

To provide a photoelectric conversion element capable of further suppressing color mixing, a method for manufacturing the same, and an imaging device. According to the present disclosure, there is provided a photoelectric conversion element including: a first compound semiconductor layer including a first compound semiconductor material having a first conductivity type; a photoelectric conversion layer formed in contact with the first compound semiconductor layer; a second compound semiconductor layer formed in contact with the photoelectric conversion layer and including a second compound semiconductor material having the first conductivity type; a first second conductivity type region formed on at least a part of the second compound semiconductor layer, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; and a second second conductivity type region formed on at least a part of the second compound semiconductor layer, having the second conductivity type, and reaching the photoelectric conversion layer, the second second conductivity type region having a region different from the first second conductivity type region.

Dependencies are inferred from the claim text.