Photodiode structure
AssigneeTaiwan-Asia Semiconductor Corporation
InventorsYen-Hsiang CHANG, Sheng-Wei CHEN
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Abstract
The present invention provides a photodiode structure, which includes a chip, an electrode group, an electrode protection layer and a metal alloy band-pass optical film. The electrode group is arranged on the chip, and the electrode group includes a positive electrode and a negative electrode; the electrode protection layer is arranged on the chip and covers the electrode group; the metal alloy band-pass optical film is arranged on the electrode protection layer and includes a plurality of layered structures, and the plurality of layered structures includes at least two metal alloy material layers.
Claims12
A photodiode structure, including:
- a chip;
- an electrode group, arranged on the chip, the electrode group including a positive electrode and a negative electrode;
- an electrode protection layer, arranged on the chip and covering the electrode group;
- and
- a metal alloy band-pass optical film, arranged on the electrode protection layer, the metal alloy band-pass optical film including a plurality of layered structures, wherein the plurality of layered structures includes at least two metal alloy material layers.
Dependencies are inferred from the claim text.