Semiconductor chip, semiconductor device and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, comprising:

• forming a power device which is an Insulated Gate Bipolar Transistor (IGBT) or a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in a semiconductor chip;
• forming a first electrode coupled to a gate of the power device, a second electrode coupled to an emitter or a source of the power device and a third electrode in the semiconductor chip;
• when one of the first electrode and the second electrode is a target electrode and the other is a non-target electrode, forming a gate protection element including a first node coupled to the third electrode, a second node coupled to the target electrode, and a plurality of stages of p-n junctions formed between the first node and the second node;
• and
• applying a voltage between the first electrode and the second electrode to measure a current.