Semiconductor device and fabricating method thereof

Abstract

The present disclosure provides a semiconductor device and a fabricating method thereof, and the semiconductor device includes a substrate, a plurality of conductive pads, and a plurality of conductive columns. The conductive pads are separately disposed in a first insulating layer, over the substrate. The conductive columns are separately disposed in a second insulating layer, individually contacting each of the conductive pads. The second insulating layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer stacked on sidewalls of the conductive columns, wherein the second dielectric layer physically contacts the first dielectric layer, the conductive pads and the third dielectric layer at the same time. The second insulating layer is allowable to avoid the short-circuit issue caused by excessively lateral etching, thereby improving the structural reliability and the performances.

Dependencies are inferred from the claim text.