Super via with sidewall spacer

A method of making a semiconductor device, the method comprising:

• forming an Mx−1 layer;
• forming a Vx−1 layer on the Mx−1 layer;
• forming a Mx layer on the Vx−1 layer;
• etching a trench in the Mx layer and the Vx−1 layer;
• forming an inner spacer layer on sidewalls of an interlayer dielectric layer in the Mx layer and the Vx−1 layer;
• forming a sacrificial layer in the Mx layer and the Vx−1 layer between the inner spacer layer;
• forming a Vx layer on the Mx layer;
• forming a Mx+1 layer on the Vx layer;
• removing the sacrificial layer;
• and
• forming a super via that extends from the Vx layer to the Mx−1 layer.