Method of forming patterns of semiconductor device

A method of forming a pattern of a semiconductor device, the method comprising:

• forming an insulating film on a substrate;
• forming a lower mask layer on the insulating film;
• forming a line-shaped hard mask pattern having an opening on the lower mask layer;
• forming line-shaped spacers on sidewalls of the opening of the line-shaped hard mask pattern;
• forming a composite mask pattern composed of the spacer and a pattern having a first width among the line-shaped hard mask patterns by removing a pattern having a second width among the line-shaped hard mask patterns, the second width being smaller than the first width;
• forming a lower mask pattern by etching the lower mask layer using the composite mask pattern as an etch mask;
• forming a line-shaped insulating pattern with a plurality of narrow openings each having a same fourth width by etching the insulating film using the lower mask pattern as an etching mask;
• forming a wide opening by removing a pattern having a third width among the line-shaped insulating patterns;
• forming a conductive material layer filling the wide opening of the line-shaped insulating pattern;
• and
• polishing the conductive material layer into a wide conductive line.

A method of forming a pattern of a semiconductor device, the method comprising:

• forming an insulating film on a substrate;
• forming a lower mask layer on the insulating film;
• forming a line-shaped hard mask pattern having an opening on the lower mask layer;
• forming line-shaped spacers on sidewalls of the opening of the line-shaped hard mask pattern;
• forming a composite mask pattern composed of the spacer and a pattern having a first width of the line-shaped hard mask patterns by removing a pattern having a second width among the line-shaped hard mask patterns, the second width being smaller than the first width;
• forming a lower mask pattern by etching the lower mask layer using the composite mask pattern as an etch mask;
• forming a line-shaped insulating pattern having a plurality of narrow openings by etching the insulating film using the lower mask pattern as an etching mask;
• forming a wide opening between the plurality of narrow openings by removing a pattern having a third width among the line-shaped insulating patterns;
• forming a conductive material layer filling the plurality of narrow openings and the wide opening of the line-shaped insulating pattern;
• and
• polishing the conductive material layer into a conductive line having a bent portion at a location of the wide opening.