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AssigneeHitachi High-Tech Corporation
InventorsYu Zhao, Makoto Satake
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The present invention provides a plasma processing technology of applying isotropic dry etching to SiGe that does not allow etching amounts of respective SiGe layers to depend on a depth of a laminated structure in a laminated structure in which Si layers and the SiGe layers are stacked alternately and repeatedly. The present invention provides a plasma processing technology of repeating plasma oxidation using an oxygen (O) element containing gas and plasma etching using a fluorine (F) element and carbon (C) element containing gas in a plasma processing method of isotropically etching respective SiGe layers selectively to respective Si layers in a structure in which the Si layers and the SiGe layers are stacked alternately and repeatedly.
A plasma processing method of isotropically etching respective silicon germanium (SiGe) layers selectively to respective silicon (Si) layers in a laminated structure in which the silicon (Si) layers and the silicon germanium (SiGe) layers are stacked alternately,
A plasma processing method of isotropically etching respective silicon germanium (SiGe) layers selectively to respective silicon (Si) layers in a laminated structure in which the silicon (Si) layers and the silicon germanium (SiGe) layers are stacked alternately,
A plasma processing method of etching a silicon germanium (SiGe) layer by plasma selectively to a silicon (Si) layer,
A manufacturing method of a semiconductor device that forms a Gate All Around-Field Effect Transistor (GAA-FET) by isotropically etching respective silicon germanium (SiGe) layers selectively to respective silicon (Si) layers in a laminated structure in which the silicon (Si) layers and the silicon germanium (SiGe) layers are stacked alternately,
A manufacturing method of a semiconductor device that forms a Gate All Around-Field Effect Transistor (GAA-FET) by isotropically etching respective silicon germanium (SiGe) layers selectively to respective silicon (Si) layers in a laminated structure in which the silicon (Si) layers and the silicon germanium (SiGe) layers are stacked alternately,
A manufacturing method of a semiconductor device that forms a Gate All Around-Field Effect Transistor (GAA-FET) by isotropically etching respective silicon germanium (SiGe) layers selectively to respective silicon (Si) layers in a laminated structure in which the silicon (Si) layers and the silicon germanium (SiGe) layers are stacked alternately,
Dependencies are inferred from the claim text.