Integrated circuit (ic) device with multi-pitch pattern fabricated through cross-linkable block copolymer

An integrated circuit (IC) device, comprising:

• a plurality of first conductive structures;
• a plurality of second conductive structures in parallel with the plurality of first conductive structures in a first direction;
• a plurality of insulative structures between individual first conductive structures and individual second conductive structures;
• a plurality of first structures, an individual first structure over an individual first conductive structure, an edge of the individual first structure aligned with an edge of the individual first conductive structure in the first direction;
• a second structure over the plurality of second conductive structures, the second structure comprising an amorphous polymer;
• a first transistor comprising a first channel region coupled to at least one of the plurality of first conductive structures;
• and
• a second transistor comprising a second channel region coupled to at least one of the plurality of second conductive structures,
• wherein a distance between centers of two adjacent first conductive structures in a second direction is smaller than a distance between centers of two adjacent second conductive structures in the second direction, and the second direction is perpendicular to the first direction.

A method for forming an integrated circuit (IC) device, comprising:

• forming a first layer over a second layer, the first layer comprising a copolymer, the second layer comprising a first conductive structure, a second conductive structure, and an insulative structure between the first conductive structure and the second conductive structure;
• forming a structure from a first section of the first layer, the first structure comprising an amorphous phase of the copolymer;
• and
• forming a lamellar pattern from a second section of the first layer through directed self-assembly of the copolymer, the lamellar pattern comprising a first lamellar structure and a second lamella structure,
• wherein an edge of the structure is aligned with an edge of the insulative structure in a first direction, a dimension of the first conductive structure in a second direction is smaller than a dimension of the second conductive structure in the second direction, and the first direction is perpendicular to the second direction.