Processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsKazuya NAGASEKI, Kazuki MOYAMA, Shinji HIMORI, Masanobu HONDA, Satoru TERUUCHI
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AssigneeTokyo Electron Limited
InventorsKazuya NAGASEKI, Kazuki MOYAMA, Shinji HIMORI, Masanobu HONDA, Satoru TERUUCHI
Estimating the term…
A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.
A processing method for performing plasma processing on a substrate, the method comprising:
A plasma processing apparatus, comprising:
Dependencies are inferred from the claim text.