Photoresist top coating material for etching rate control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Yang LIN, Ching-Yu CHANG, Chin-Hsiang LIN
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Abstract
A patterning stack is provided. The patterning stack includes a bottom anti-reflective coating (BARC) layer over a substrate, a photoresist layer having a first etching resistance over the BARC layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. The top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attacked to the polymer backbone or a silicon cage compound.
Claims20
A patterning stack, comprising:
- a bottom anti-reflective coating (BARC) layer over a substrate;
- a photoresist layer having a first etching resistance over the BARC layer;
- and
- a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer, wherein the top coating layer comprises a silicon cage compound.
A method for fabricating a semiconductor structure, comprising:
- depositing a first material layer over a substrate;
- depositing a second material layer over the first material layer;
- forming a photoresist layer having a first etching resistance over the second material layer;
- and
- forming a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer, wherein the top coating layer comprises a silicon cage compound;
- patterning the top coating layer and the photoresist layer to provide a patterned top coating layer and a patterned photoresist layer;
- and
- etching the second material layer using the patterned top coating layer and the patterned photoresist layer as an etch mask to provide a patterned second material layer.
A patterning stack, comprising:
- a first material layer over a substrate;
- a second material layer over the first material layer;
- a photoresist layer having a first etching resistance over the second material layer;
- and
- a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer, the top coating layer comprising a polymer having one of the following structures:
- wherein:
- R1 is an acid labile group;
- R2 is substituted or unsubstituted aryl, substituted or unsubstituted cycloalkyl or substituted or unsubstituted cyclic alkene;
- and
- m and n are independently an integer greater than 0.
Dependencies are inferred from the claim text.