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US 2024/0192582 A1Published application
Extreme ultraviolet mask and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue LIN
Life of this patent
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Abstract
A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.
Claims20
A photolithography mask, comprising:
- a substrate;
- a reflective multilayer structure over the substrate;
- an adhesion layer in direct contact with a topmost surface of the reflective multilayer structure, wherein the adhesion layer comprises a dielectric material;
- an amorphous capping layer over the adhesion layer, the amorphous capping layer comprising a transitional metal having a first carbon solubility and a dopant having second carbon solubility less than the first carbon solubility;
- and
- a patterned absorber layer over the amorphous capping layer.
3 more elements
An extreme ultraviolet (EUV) mask, comprising:
- a substrate;
- and
- a material stack over a first surface of the substrate, the material stack comprising:
- a reflective multilayer structure over the first surface of the substrate;
- a dielectric material layer over the reflective multilayer structure;
- an amorphous capping layer over the dielectric material layer, the amorphous capping layer comprising a transitional metal having a first carbon solubility and a dopant having second carbon solubility less than the first carbon solubility;
- a patterned absorber layer over the amorphous capping layer;
- and
- a patterned anti-reflection layer over the patterned absorber layer.
6 more elements
An extreme ultraviolet (EUV) mask, comprising:
- a substrate;
- a reflective multilayer structure over the substrate;
- a dielectric material layer over the reflective multilayer structure;
- a capping layer over the dielectric material layer, wherein the capping layer comprises an amorphous or a semi-crystalline conductive material;
- a patterned absorber layer over the capping layer;
- and
- a patterned anti-reflection layer over the patterned absorber layer.
4 more elements
Dependencies are inferred from the claim text.