Minimizing tin oxide chamber clean time

An apparatus for processing a substrate, the apparatus comprising:

• a processing chamber having a chamber surface on an interior of the processing chamber;
• an inlet to the processing chamber for introducing reactants to the processing chamber;
• an outlet to the processing chamber for removing species from the processing chamber;
• a plasma generator configured to provide plasma in the processing chamber;
• and
• a controller configured to cause:
• exposing the chamber surface to a first plasma generated from a first plasma generation gas comprising a first reducing chemistry to reduce tin oxide on the chamber surface to tin, and
• exposing the chamber surface to a second plasma generated from a second plasma generation gas comprising a second reducing chemistry and an organic additive chemistry to remove the tin from the chamber surface.