Composition and method for conducting a material removing operation
AssigneeSaint-Gobain Ceramics & Plastics, Inc.
InventorsRenjie Zhou, Chun-Lung Kuan, Lin Fu
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Abstract
In one embodiment, a polishing composition can comprise abrasive particles including zirconia, an oxidizing agent including hydroxylamine and a triazole compound, the triazole compound being selected from 1,2,4-triazole, or 1,2,3-triazole, or a combination thereof. The polishing composition can have an even a polishing selectivity of copper (Cu) to tantalum nitride (TaN) to silicon dioxide (SiO2) of 1:1:1, with a with a selectivity variation not greater than ±50%.
Claims20
A polishing composition comprising abrasive particles including zirconia, an oxidizing agent including hydroxylamine and a triazole compound, the triazole compound being selected from 1,2,4-triazole, or 1,2,3-triazole, or a combination thereof.
A polishing composition comprising abrasive particles including zirconia, and an oxidizing agent including hydroxylamine, wherein the polishing composition is adapted that a polishing selectivity of copper (Cu) to tantalum nitride (TaN) ranges from 1:0.5 to 1:3.
A method of polishing a substrate, comprising:
- providing a substrate and a polishing composition;
- and
- polishing the substrate with the polishing composition using a polishing pad, wherein the polishing composition comprises abrasive particles including zirconia, an oxidizing agent including hydroxylamine and a triazole compound, the triazole compound being selected from 1,2,4-triazole or 1,2,3-triazole.
Dependencies are inferred from the claim text.