Multiple layers of void-free interlayer dielectric between adjacent magnetoresistive random-access memory devices

Abstract

A semiconductor structure with a magnetic tunnel junction (MTJ) pillar for a magnetoresistive random-access memory (MRAM) device, where each material layer of the MTJ pillar resides on a lower material layer of the MTJ pillar with a different width. Embodiments of the present invention provide a top electrode with a tapered shape. Embodiments of the present invention also provide a dielectric encapsulation layer around the reference layer and around the free layer. The dielectric encapsulation material surrounding a sidewall of the reference layer is composed of a different dielectric encapsulation material than the dielectric encapsulation around the sidewall of the free layer.

Dependencies are inferred from the claim text.