Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSong KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a lower structure; a vertical conductive line extending in a first direction which is perpendicular to a surface of the lower structure; a reservoir capacitor disposed over the lower structure to be spaced apart from the vertical conductive line; a bridge horizontal layer disposed between the vertical conductive line and the reservoir capacitor and extending horizontally in a second direction which is parallel to the surface of the lower structure; and a pair of horizontal layers extending in a third direction intersecting the bridge horizontal layer with the bridge horizontal layer interposed therebetween.
Claims16
A semiconductor device, comprising:
- a lower structure;
- a vertical conductive line extending in a first direction which is perpendicular to a surface of the lower structure;
- a reservoir capacitor disposed over the lower structure to be spaced apart from the vertical conductive line;
- a bridge horizontal layer disposed between the vertical conductive line and the reservoir capacitor and extending horizontally in a second direction which is parallel to the surface of the lower structure;
- and
- a pair of horizontal layers extending in a third direction intersecting the bridge horizontal layer with the bridge horizontal layer interposed therebetween.
A semiconductor device, comprising:
- a memory cell array including a three-dimensional array of cell capacitors;
- and
- a reservoir capacitor array which is horizontally spaced apart from the memory cell array and includes a three-dimensional array of reservoir capacitor structures,
- wherein each of the reservoir capacitor structures includes:
- a vertical conductive line;
- a reservoir capacitor which is spaced apart from the vertical conductive line and has the same structure as structures of the cell capacitors;
- a bridge horizontal layer oriented horizontally between the vertical conductive line and the reservoir capacitor;
- and
- a pair of horizontal layers extending in a direction intersecting the bridge horizontal layer with the bridge horizontal layer interposed therebetween.
Dependencies are inferred from the claim text.