US 2024/0186450 A1 · COMPOSITE SUBSTRATE, EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE

Abstract

Disclosed are a composite substrate, an epitaxial wafer, and a semiconductor device. The composite substrate includes: a support substrate layer; a first alumina layer disposed on the support substrate layer; and a sapphire substrate layer disposed on the first alumina layer. The first alumina layer may increase a bonding force between the sapphire substrate layer and the support substrate layer and release a stress between the sapphire substrate layer and the support substrate layer. Meanwhile, the existence of the first alumina layer may improve a breakdown voltage of a material without increasing a thickness of the sapphire substrate layer.

Claims20

Dependent claims

A composite substrate, comprising:

a support substrate layer;
a first alumina layer disposed on the support substrate layer;
and
a sapphire substrate layer disposed on the first alumina layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

18/347,036Filed 5 Jul 2023

Priority

CN 202223267004.56 Dec 2022

Published

6 Jun 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/825
Comprising only Group III-V materials, e.g. GaP: containing nitrogen, e.g. GaN
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN

Composite substrate, epitaxial wafer, and semiconductor device

Life of this patent

Composite substrate, epitaxial wafer, and semiconductor device

Life of this patent

Abstract

Claims20