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US 2024/0186441 A1Published application
Lateral phototransistor
AssigneeGlobalFoundries U.S. Inc.
InventorsAlexander M. DERRICKSON, Uppili S. RAGHUNATHAN, Vibhor JAIN, Yusheng BIAN, Judson R. HOLT
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.
Claims20
A structure comprising:
- a lateral bipolar transistor;
- and
- a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.
A structure comprising:
- a lateral bipolar transistor comprising a laterally connected intrinsic base, emitter and collector comprising a top semiconductor layer of a semiconductor on insulator substrate;
- a T-shaped photosensitive structure vertically above and in contact with the intrinsic base;
- and
- a spacer isolating the T-shaped photosensitive structure from both the emitter and the collector.
1 more element
A method comprising:
- forming a lateral bipolar transistor comprising a laterally connected intrinsic base, emitter and collector comprising a top semiconductor layer of a semiconductor on insulator substrate;
- forming a T-shaped photosensitive structure vertically above and in contact with intrinsic base;
- and
- forming a spacer isolating the T-shaped photosensitive structure from both the emitter and the collector.
1 more element
Dependencies are inferred from the claim text.