Capacitor structures

A capacitor structure, comprising:

• a first conductively doped region of a semiconductor material, the first conductively doped region having a first conductivity type and comprising a first protrusion portion and a second protrusion portion;
• a second conductively doped region of the semiconductor material, the second conductively doped region having a second conductivity type different than the first conductivity type and comprising a third protrusion portion;
• a dielectric material overlying the first protrusion portion of the first conductively doped region;
• a first conductor material overlying the dielectric material;
• and
• a terminal of a diode configured to be a portion of a conductive path between the second protrusion portion of the first conductively doped region and the third protrusion portion of the second conductively doped region, the terminal of the diode comprising a second conductor material.

A capacitor structure, comprising:

• a region of n-type doped silicon material comprising a first protrusion portion and a second protrusion portion, the first protrusion portion forming a first electrode of a capacitor;
• a
• a region of p-type doped silicon material comprising a third protrusion portion;
• dielectric structure overlying the first protrusion portion;
• a first conductively doped silicon material overlying the dielectric structure, the first conductively doped silicon material forming a second electrode of the capacitor;
• and
• a second conductively doped silicon material overlying and in direct contact with the second protrusion portion and the third protrusion portion.