Integrated circuit device with interconnects made of layered topological materials

A method of manufacturing an integrated circuit device including one or more interconnects, comprising:

• depositing and structuring each interconnect of the one or more interconnects as a stack of layers to obtain the integrated circuit, wherein
• the stack of layers including distinct topological layers, each of the distinct topological layers being a layer of topological material, and
• any two successive layers of the distinct topological layers are separated by one or more interfaces, each forming a boundary between two consecutive layers of the stack, where the two consecutive layers are engineered to preserve topologically protected surface states of each of the any two successive layers of the distinct topological layers.