Semiconductor device structure with energy removable structure and method for preparing the same

A semiconductor device structure, comprising:

• a first dielectric layer disposed over a semiconductor substrate;
• a first energy removable structure disposed in the first dielectric layer;
• a second dielectric layer disposed over the first dielectric layer;
• a second energy removable structure disposed in the second dielectric layer;
• an Nth dielectric layer disposed over the second dielectric layer, wherein the N is an integer greater than 2;
• a first conductor disposed in the Nth dielectric layer;
• and
• an (N+1)th dielectric layer disposed over the Nth dielectric layer, wherein a top surface of the first conductor is exposed by a first opening, and a top surface of the second energy removable structure is exposed by a second opening.

A method for preparing a semiconductor device structure, comprising:

• forming a first dielectric layer over a semiconductor substrate;
• forming a first energy removable structure in the first dielectric layer;
• forming a second dielectric layer over the first dielectric layer and covering the first energy removable structure;
• forming an Nth dielectric layer over the second dielectric layer, wherein the N is an integer greater than 2;
• forming a first conductor in the Nth dielectric layer;
• forming an (N+1)th dielectric layer over the Nth dielectric layer and covering the first conductor;
• and
• performing an etching process to form a first opening exposing the first conductor and a second opening directly over the first energy removable structure, wherein a bottom surface of the first opening is higher than a bottom surface of the second opening.